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Everspin Technologies, Inc. 總部位于美國亞利桑那州的錢德勒，是設計、制造和銷售離散、嵌入式磁阻 RAM (MRAM) 和轉動扭矩 MRAM (ST-MRAM) 的全球領導者，其產品針對那些數據的持久性和完整性、低延遲和安全性至關重要的行業和應用。憑借在數據中心、云存儲、能源、工業、汽車和運輸市場中部署了超過 7,000 萬個 MRAM 和 ST-MRAM 產品，Everspin 奠定了最強大、增長最快的 MRAM 用戶基礎。
Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world.
Core Competence with MRAM: From Perpendicular to Field-Switched
Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells.
In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.
